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Si-implanted subcollector heterojunction bipolar transistors

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9 Author(s)
M. H. Sun ; Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA ; R. L. Pierson ; M. Y. Chen ; P. J. Zampardi
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AlGaAs/GaAs n-p-n heterojunction bipolar transistors (HBTs) fabricated using an Si-implant to form the subcollector followed by MOCVD growth of the remaining structure are demonstrated. The common emitter current gain of large test devices is ~50 at a collector current density of 1.9×103 A/cm2. The base-collector and emitter-base current ideality factors are 1.08 and 1.26, respectively. Co-implantation with Se reduced the subcollector sheet resistance to 13 Ω/□. Patterning of this implanted subcollector results in a significant reduction of extrinsic base-collector capacitance (Chc)

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Electronics Letters  (Volume:34 ,  Issue: 11 )