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Transimpedance amplifiers fabricated with In0.52Al0.48As/In0.53Ga0.47 As doped-channel heterostructures

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2 Author(s)
Feng-Tso Chien ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li ; Yi-Jen Chan

Transimpedance amplifiers fabricated with InAlAs/InGaAs doped-channel field effect transistors (DCFETs) are demonstrated. Owing to the high linearity of the DCFET device performance, this amplifier circuit shows a wide dynamic range in gain profile, indicating great promise for driving the next generation circuits in communication systems. The transimpedance gain is as high as 460 Ω and the maximum bandwidth 7.3 GHz

Published in:

Electronics Letters  (Volume:34 ,  Issue: 11 )