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Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

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7 Author(s)
F. Nakamura ; Res. Center, Sony Corp., Yokohama, Japan ; T. Kobayashi ; T. Tojo ; T. Asatsuma
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The room-temperature pulsed operation of a five GaInN multiple-quantum-well (MQW) laser diode (LD) is reported. The lowest threshold current density was 9.5 kA/cm2. The highest external differential quantum efficiency was 49% for a 1 mm long cavity. The laser wavelength was 417.5 nm with a full width at half maximum (FWHM) of less than the spectrum resolution of 0.2 nm. The characteristic temperature was 185 K. Pulsed operation of the LD up to 80°C was demonstrated. Laser operation was confirmed with a duty cycle up to 10%

Published in:

Electronics Letters  (Volume:34 ,  Issue: 11 )