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8.8 W CW power from broad-waveguide Al-free active-region (λ=805 nm) diode lasers

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4 Author(s)
Wade, J.K. ; Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA ; Mawst, L.J. ; Botez, D. ; Morris, J.A.

Al-free active-region (λ=805 nm) diode lasers with 1 μm thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 μm wide stripes. The transverse beam pattern is Gaussian-like with a 36° beamwidth and the series resistance is only 48 mΩ

Published in:

Electronics Letters  (Volume:34 ,  Issue: 11 )

Date of Publication:

28 May 1998

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