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40 Gbit/s EAM driver IC in SiGe bipolar technology

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4 Author(s)
R. Schmid ; Ruhr-Univ., Bochum, Germany ; T. F. Meister ; M. Rest ; H. -M. Rein

An SiGe bipolar IC for directly driving a differential electroabsorption modulator (EAM) in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to 2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips

Published in:

Electronics Letters  (Volume:34 ,  Issue: 11 )