By Topic

GaAs monolithic integrated photoreceiver for 0.8 μm wavelength: association of Schottky photodiode and FET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Verriele, H. ; Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lilles, Villeneuve d''Ascq, France ; Lorriaux, J.L. ; Legry, P. ; Gouy, J.P.
more authors

The authors report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to -30 dBm can be achieved at 250 Mbit/s for a 1E-9 bit error rate

Published in:

Optoelectronics, IEE Proceedings J  (Volume:135 ,  Issue: 2 )