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GaAs monolithic integrated photoreceiver for 0.8 mu m wavelength: association of Schottky photodiode and FET

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6 Author(s)
H. Verriele ; Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lilles, Villeneuve d'Ascq, France ; J. L. Lorriaux ; P. Legry ; J. P. Gouy
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The authors report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to -30 dBm can be achieved at 250 Mbit/s for a 1E-9 bit error rate.<>

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IEE Proceedings J - Optoelectronics  (Volume:135 ,  Issue: 2 )