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We present an experimental method to quantify the series resistance Ra-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize Ra-Si/ITO, we apply different a-Si:H and ITO deposition parameters. We find the best value for R(p)-a-Si/ITO of 0.42 Ω·cm2 for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R(n)-a-Si/ITO, we reach values below 0.1 Ω·cm2. We present an analysis of the series resistance and shading losses of our 100-cm2 bifacial screen-printed a-Si:H/cSi heterojunction solar cells, which show an open-circuit voltage of Voc = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm2 and fill factor of 76%.