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32×32 two-dimensional array of vertical to surface transmission electrophotonic devices with a pnpn structure

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5 Author(s)
Kurihara, K. ; Opto-Electron. Res. Lab., NEC Corp., Ibaraki, Japan ; Tashiro, Y. ; Ogura, I. ; Sugimoto, M.
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A novel electrophotonic mode of operation reduces both the memory holding power and the optical switching energy to 26 fJ at a 9 ns writing period in vertical to surface transmission electrophotonic devices with a pnpn structure (pnpn-VSTEPs). An integration of 1024 pnpn elements in a two-dimensional matrix has been demonstrated for these electrophotonic operations by using a thick metal line process and a low temperature dielectric film deposition for improving characteristics uniformity

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Optoelectronics, IEE Proceedings J  (Volume:138 ,  Issue: 2 )