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Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

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5 Author(s)
Illarionov, Yu.Yu. ; Singapore Institute of Manufacturing Technology, 71 Nanyang Drive 638075, Singapore ; Vexler, M.I. ; Fedorov, V.V. ; Suturin, S.M.
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Metal/CaF2/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes.

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Journal of Applied Physics  (Volume:115 ,  Issue: 22 )