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Operation of InGaAs quasi-quantum-wire FET fabricated by selective growth using molecular beam epitaxy

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5 Author(s)
Sugaya, T. ; Electrotech. Lab., Tsukuba, Japan ; Takahashi, T. ; Nakagawa, T. ; Ogura, M.
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A field effect transistor (FET) using single InGaAs quasi-quantum-wire (quasi-QWR) as a channel has been fabricated. The quasi-QWR structures were fabricated by selective growth using molecular beam epitaxy on non-planar InP substrate. The width and thickness of the quasi-QWR are 200 nm and 7 nm, respectively. The FET demonstrated good saturation characteristics and its maximum transconductance (gm) was 105 mS/mm at a drain voltage of 0.6 V

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Electronics Letters  (Volume:34 ,  Issue: 9 )