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High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

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7 Author(s)
Sullivan, G.J. ; Rockwell Sci. Center, Thousand Oaks, CA, USA ; Higgins, J.A. ; Chen, M.Y. ; Yang, J.W.
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Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an fmax≈42 GHz, and an fT≈15 GHz. At 10 GHz, 320 μm wide transistors had a total power of 900 mW with a gain of 6.5 dB, which corresponds to a power density of 2.8 W/mm

Published in:

Electronics Letters  (Volume:34 ,  Issue: 9 )

Date of Publication:

30 Apr 1998

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