Referenced Items are not available for this document.
A novel entirely planar quantum transistor based on tunnelling between two separate electron layers in an AlGaAs/GaAs double quantum well heterostructure is demonstrated. Using the tunability of the tunnelling I-V characteristics, digital logic such as XOR and NAND are demonstrated using a single double electron layer tunnelling transistor
Published in:
Electronics Letters
(Volume:34
,
Issue:
9
)
Date of Publication: 30 Apr 1998
- Page(s):
- 921 - 922
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5921634
- Digital Object Identifier :
- 10.1049/el:19980650
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 30 Apr 1998
- Sponsored by :
- Institution of Engineering and Technology
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