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Self-organised InGaAs quantum wire lasers on GaAs multi-atomic steps

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3 Author(s)
S. Hara ; Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan ; J. Motohisa ; T. Fukui

The authors report the first successful demonstration of self-organised InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-atomic steps at 77 K by pulsed current injections. The lasing wavelength of InGaAs QWR-LDs is consistent with the peak position of photoluminescence spectra at 77 K. When a cavity direction is perpendicular to the QWR's array direction, the threshold current density of InGaAs QWR LDs is smaller than that of quantum well LDs

Published in:

Electronics Letters  (Volume:34 ,  Issue: 9 )