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Browse Journals & Magazines > Electronics Letters ...> Volume:34 Issue:9 Help

Self-organised InGaAs quantum wire lasers on GaAs multi-atomic steps

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3 Author(s)
Hara, S. ; Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan ; Motohisa, J. ; Fukui, T.

The authors report the first successful demonstration of self-organised InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-atomic steps at 77 K by pulsed current injections. The lasing wavelength of InGaAs QWR-LDs is consistent with the peak position of photoluminescence spectra at 77 K. When a cavity direction is perpendicular to the QWR's array direction, the threshold current density of InGaAs QWR LDs is smaller than that of quantum well LDs

Published in:
Electronics Letters  (Volume:34 ,  Issue: 9 )

Date of Publication: 30 Apr 1998

Page(s):
894 - 895
ISSN :
0013-5194
INSPEC Accession Number:
5914572
Digital Object Identifier :
10.1049/el:19980673
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
30 Apr 1998
Sponsored by :
Institution of Engineering and Technology

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