By Topic

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rui Zhang ; Dept. of Inf. Syst. & Electron. Eng., Univ. of Tokyo, Hangzhou, China ; Xiao Yu ; Takenaka, M. ; Takagi, S.

Mechanisms of the mobility degradation in high normal field (or Ns) in Ge pand n-metal-oxide-semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeOx/Ge MOS interfaces: 1) carrier trapping due to surface states; 2) surface roughness scattering; and 3) electron transfer into the Δ valleys with the high effective mass, have been systematically investigated. It is confirmed that the existence of surface states inside the valence band and the conduction band of Ge results in over estimation of the mobile inversion carrier concentration and the rapid reduction of the effective mobility. It is also found that the Hall hole and electron mobility in high Ns region agree well with the theoretical surface roughness limited mobility, indicating that the high Ns mobility in Ge MOSFETs are still significantly limited by surface roughness scattering. On the other hand, any evidence of the carrier repopulation into the subband with low mobility has not been experimentally identified in both Ge pand n-MOSFETs yet.

Published in:

Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 7 )