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Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

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3 Author(s)
Ghosh, R.K. ; Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India ; Brahma, M. ; Mahapatra, S.

We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel material for switching devices than the boat morphology. Furthermore, we study the effect of elastic strain, van der Waals force, and vertical electric field on these band structure properties. Due to its very low effective mass with relatively high-energy bandgap, in comparison with the other 2-D materials, Germanane appears to provide superior performance in switching device applications.

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Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 7 )