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A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

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10 Author(s)
Biggeri, U. ; Dept. di Energetica, INFN. Firenze, Italy ; Borchi, E. ; Bruzzi, M. ; Eremin, V.
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Silicon p+n junctions irradiated with neutron and proton fluences in the range 5×1011-4×1015 cm-2 and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration Nt of the main radiation-induced deep traps (Et≈0.44-0.54 eV) is found to increase as Nt α f achieving values up to 5×1015 cm-3 and a mobility saturation at 100 cm2/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk, and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 3 )