Referenced Items are not available for this document.
Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed
Published in:
Nuclear Science, IEEE Transactions on
(Volume:45
,
Issue:
3
)
Date of Publication: Jun 1998
- Page(s):
- 591 - 596
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5955738
- Digital Object Identifier :
- 10.1109/23.682454
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1998
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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