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Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors

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9 Author(s)
Bates, R. ; Dept. of Phys. & Astron., Glasgow Univ., UK ; Didziulis, R. ; Kazukauskas, V. ; O'Shea, V.
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Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed

Published in:

Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 3 )

Date of Publication:

Jun 1998

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