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Imaging performance of single-element CdZnTe detectors for digital radiography

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6 Author(s)
E. Bertolucci ; Dipt. di Sci. Fisiche, Univ. Federico II, Napoli, Italy ; P. Chirco ; M. Conti ; L. Marcello
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We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2×10×10 mm3, irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R

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IEEE Transactions on Nuclear Science  (Volume:45 ,  Issue: 3 )