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Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1×1015 p cm-2

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11 Author(s)
Gomez, A. ; SCIPP, California Univ., Santa Cruz, CA, USA ; Kroege, W. ; Nissen, T. ; Sadrozinski, H.F.-W.
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We have irradiated an n-side silicon microstrip detector to an equivalent high energy fluence of 1×1015 p cm-2 using 55 MeV protons. We determined the median pulse height to be 0.7 fC at a bias voltage of 180 V, and deduced a depletion region of about 80 μm

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 3 )