Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1/spl times/10/sup 15/ p cm/sup -2/

We have irradiated an n-side silicon microstrip detector to an equivalent high energy fluence of 1/spl times/10/sup 15/ p cm/sup -2/ using 55 MeV protons. We determined the median pulse height to be 0.7 fC at a bias voltage of 180 V, and deduced a depletion region of about 80 /spl mu/m.