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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

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2 Author(s)
Abdi, D.B. ; Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, New Delhi, India ; Kumar, M.J.

In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage, overlapping the gate on the drain limits the gate to control only the tunneling barrier width at the source-channel interface irrespective of the polarity of the gate voltage. As a result, the proposed overlapping gate-on-drain TFET exhibits suppressed ambipolar conduction even when the drain doping is as high as 1 × 1019 cm-3.

Published in:

Electron Devices Society, IEEE Journal of the  (Volume:2 ,  Issue: 6 )