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Tunnel Field-Effect Transistors: State-of-the-Art

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2 Author(s)
Hao Lu ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA ; Alan Seabaugh

Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values are not based on many points. The highest current at which sub-threshold swing below 60 mV/decade is observed is in the range 1-10 nA/μm. A common approach to TFET characterization is proposed to facilitate future comparisons.

Published in:

IEEE Journal of the Electron Devices Society  (Volume:2 ,  Issue: 4 )