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We present the development of a lumped element model for the BGA transition using both measurements and simulations results. Measurements of the test structure are used to generate a circuit model for a single bump configuration. This model is used to calibrate EM simulations of the bump geometry. Furthermore, the effect of the bump diameter on the equivalent circuit model is presented. This model approach is scaleable and extendible to a more global behavior of BGA interconnects for RF packaging.