Cart (Loading....) | Create Account
Close category search window
 

A New Definition of the Threshold Voltage for Amorphous InGaZnO Thin-Film Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Qiang, L. ; School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China ; Yao, R.

An important parameter which characterizes thin-film transistors (TFTs) is the threshold voltage. Various methods have been proposed to extract the threshold voltage in amorphous InGaZnO (a-IGZO) TFTs, but few models have been presented based on material characteristics and the carrier transport. With regard to a-IGZO films, under low carrier concentrations, current conduction would be dominated by trap-limited conduction, while it switches to the percolation conduction mechanism as the carrier concentration increased and the degenerate conduction is achieved at higher carrier concentrations. In this case, the threshold voltage can be defined as the gate voltage when the degenerate conduction comes into existence, and then a physics-based method of threshold voltage extraction for a-IGZO TFTs is developed. The accuracy of the proposed model was proved by comparison with the measured data. As the new definition makes it possible to combine the threshold voltage with the material property, it is expected to play a significant role in the device modeling for the simulation of circuits based on a-IGZO TFTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 7 )

Date of Publication:

July 2014

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.