By Topic

On the Electrostatic Discharge Robustness of Graphene

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hong Li ; Emerging Memory Group, Micron Technology, Boise, ID, USA ; Christian C. Russ ; Wei Liu ; David Johnsson
more authors

A comprehensive study of electrostatic discharge (ESD) characterization of atomically thin graphene is reported. In a material comprising only a few atomic layers, the thermally destructive second breakdown transmission line pulsing (TLP) current (It2) reaches a remarkable 4 mA/μm for 100-ns TLP and ~8 mA/μm for 10-ns TLP or an equivalent current density of ~3 × 108 and 4.6 × 108 A/cm2, respectively. For ~5-nm thick (~15 layers) graphene film, It2 reaches 7.4 mA/μm for 100-ns pulse. The fact that failure occurs within the graphene and not at the contacts indicates that intrinsic breakdown properties of this new material can be appropriately characterized using short-pulse stressing. Moreover, unique gate biasing effects are observed that can be exploited for novel applications including robust ESD protection designs for advanced semiconductor products. This demonstration of graphene's outstanding robustness against high-current/ESD pulses also establishes its unique potential as transparent electrodes in a variety of applications.

Published in:

IEEE Transactions on Electron Devices  (Volume:61 ,  Issue: 6 )