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Fabrication of Submicrometer InGaAs/AlAs Resonant Tunneling Diode Using a Trilayer Soft Reflow Technique With Excellent Scalability

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4 Author(s)
Zawawi, M.A.M. ; Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK ; Ian, K.W. ; Sexton, J. ; Missous, M.

A trilayer soft reflow fabrication method using solvent vapor that resulted in a submicrometer resonant tunneling diode (RTD) is reported in detail. The processing steps are simple, time efficient and are all based on conventional i-line photolithography. The trilayer soft reflow technique is able to shrink the emitter lateral width from 1 down to 0.35 μm (65% reduction) using a solvent at a very low temperature (<;50 °C). Studies of device's peak current density (JP) suggest that excellent scalability is achieved as the emitter area reduces from ~29 down to ~0.5 μm2 with no significant increase in peak voltage (VP) due to high series resistance normally associated with submicrometer dimensions. The valley current (IV ), however, increases due to side-wall damage introduced by the reactive ion etching (RIE) process. As a result, the peak-to-valley-current ratio decreases from 5.0 (6.3) to 3.8 (4.1) in forward (reverse) direction as the emitter area decreases. We therefore successfully demonstrated the fabrication of a submicrometer RTD using a trilayer soft reflow technique that has the benefit of excellent scalability, high throughput, repeatable, and a reliable low-cost process.

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Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 7 )