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Novel Ga-ZnO Nanosheet Structures Applied in Ultraviolet Photodetectors

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9 Author(s)
Chih-Chiang Yang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yan-Kuin Su ; Chih-Hung Hsiao ; Sheng-Joue Young
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Vertically aligned Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate using a low-temperature (90 °C) hydrothermal method. The average length and diameter of the nanosheets were ~720 and 26 nm, respectively. The GZO nanosheets exhibited wurtzite and monoclinic structures. A metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated for the GZO nanosheets. Results revealed that the photoresponses of the GZO UV PD were flat at short wavelengths. Meanwhile, a sharp cutoff was observed at 340 nm. The UV-to-visible rejection ratio of the fabricated PD was ~89 at 1 V bias voltage.

Published in:

Photonics Technology Letters, IEEE  (Volume:26 ,  Issue: 13 )