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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:10 Issue:7 Help

Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain

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6 Author(s)
Klotzkin, David ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Kamath, K. ; Vineberg, K. ; Bhattacharya, Pallab
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Measurements of the threshold current, slope efficiency and optical modulation characteristics of self-assembled InGaAs-GaAs quantum-dot lasers have been made in the temperature range of 20-200 K in order to understand the carrier dynamics in these devices. The dc characteristics of these devices showed a region of almost temperature independent threshold current up to 85 K (T/sub 0/=670 K) with a maximum slope efficiency at 150 K. The maximum measured bandwidth increased from 5 GHz at room temperature to 20 GHz at 80 K. This is consistent with the bandwidth being limited by carrier relaxation time through electron-hole scattering.

Published in:
Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 7 )

Date of Publication: July 1998

Page(s):
932 - 934
ISSN :
1041-1135
INSPEC Accession Number:
5957298
Digital Object Identifier :
10.1109/68.681274
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
July 1998
Sponsored by :
IEEE Photonics Society

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