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Monolithic super-bright resonant-cavity light-emitting diode operating at /spl lambda/=663 nm has been developed. The diode consisted of a 1/spl lambda/-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 /spl mu/m. The emission linewidth was as narrow as 4.5 nm.