By Topic

Incorporating DRAM access modes into high-level synthesis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
P. Ranjan Panda ; Synopsys Inc., Mountain View, CA, USA ; N. D. Dutt ; A. Nicolau

Memory-intensive behaviors often contain large arrays that are synthesized into off-chip memories. With the increasing gap between on-chip and off-chip memory access delays, it is imperative to exploit the efficient access mode features of modern-day memories (e.g., page-mode DRAM's) in order to alleviate the memory bandwidth bottleneck. Although recent research efforts in high-level synthesis (HLS) have addressed the issue of memory-based synthesis, current techniques are unable to exploit efficiently the special access modes of these off-chip memories, resulting in significantly inferior performance using these memory library parts. Our work addresses this issue by (a) modeling realistic off-chip memory access modes for HLS, (b) presenting algorithms to infer applicability of HLS with these memory access modes, and (c) transforming input behavior to provide further memory access optimizations during HLS. We demonstrate the utility of our approach using a suite of memory-intensive benchmarks with a realistic DRAM library module. Experimental results show a significant performance improvement (more than 40%) as a result of our optimization techniques

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:17 ,  Issue: 2 )