Referenced Items are not available for this document.
This paper demonstrates an illuminated FET model including an illumination-intensity parameter for simulation of optical characteristics of microwave and millimeter wave integrated circuits (MMIC's). Modeling for an illuminated GaAs MESFET and an InP high electron-mobility transistor (HEMT), and analysis and experimental results from optically controlled microwave and millimeter-wave hybrid integrated circuit (HIC) and MMIC oscillators are discussed. The proposed illuminated FET model was able to explain the photoresponse of both the GaAs MESFET and the InP HEMT, and the photooperation of their circuits
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:46
,
Issue:
6
)
Date of Publication: Jun 1998
- Page(s):
- 820 - 828
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 5949038
- Digital Object Identifier :
- 10.1109/22.681206
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1998
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
