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Barrier Height at the Graphene and Carbon Nanotube Junction

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7 Author(s)
Tae Geun Kim ; Res. Center for Time-Domain Nano-Functional Device, Samsung Adv. Inst. of Technol., Yongin, South Korea ; Un Jeong Kim ; Si Young Lee ; Young Hee Lee
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Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

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Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 6 )