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High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

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1 Author(s)
Sullivan, J.S. ; Lawrence Livermore National Laboratory, Livermore, California 94550, USA

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4875258 

We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm2 at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.

Published in:

Applied Physics Letters  (Volume:104 ,  Issue: 17 )

Date of Publication:

Apr 2014

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