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Principle of Module-Level Processing Demonstrated at Single a-Si:H/c-Si Heterojunction Solar Cells

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5 Author(s)
Petermann, J.H. ; Inst. for Solar Energy Res. Hamelin, Emmerthal, Germany ; Schulte-Huxel, H. ; Steckenreiter, V. ; Kajari-Schroder, S.
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We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 mΩ·cm2,and their tear-off stress is 27.6 kPa.

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Photovoltaics, IEEE Journal of  (Volume:4 ,  Issue: 4 )