By Topic

Large optical nonlinearities near the bandgap of MOCVD-grown GaN thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Schmidt, T.J. ; Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA ; Song, J.J. ; Chang, Y.C. ; Horning, R.
more authors

Summary form only given.To study the effects of high densities of excess free carriers on the optical transitions near the band edge of wurtzite GaN, nondegenerate nanosecond optical pump-probe transmission and reflection experiments have been performed on GaN thin films grown by metallo-organic chemical-vapor deposition (MOCVD) on (0001)-oriented sapphire. The large magnitude of the optical nonlinearities observed in our work suggests the possibility of new optoelectronic applications.

Published in:

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Date of Conference:

8-8 May 1998