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Summary form only given.Semiconductor lasers driven by a constant current source are expected to generate intensity-squeezed light when the laser is biased far above threshold. However, most semiconductor lasers do not exhibit intensity squeezing. To generate squeezed light from a semiconductor laser, low-threshold, high quantum-efficiency, stable single longitudinal and polarization mode operations are indispensable. We have achieved low threshold (1.6 mA at 80 K) and high external quantum efficiency (0.75 at 80 K) in transverse-junction stripe GaAs lasers by making the laser cavity short (200 /spl mu/m), and by designing the junction structure for good confinement of the carriers and heavily doping the active layer.