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Ultrafast carrier capture and relaxation in InGaAs self-organized quantum dots

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6 Author(s)
Sosnowski, T. ; Center for Ultrafast Opt. Sci., Michigan Univ., Ann Arbor, MI, USA ; Urayama, J. ; Norris, T.B. ; Jiang, H.
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Summary form only given.The study of carrier capture and relaxation in self-organized quantum dots is a key step in the understanding of the device physics of novel quantum-dot lasers and detectors. We have investigated these ultrafast processes in In/sub 0.4/Ga/sub 0.6/As quantum dots using femtosecond differential transmission (DT) spectroscopy at 10 K. The sample consists of four undoped layers of self-organized InGaAs quantum dots with GaAs barriers and AlGaAs cladding layers. The band-structure calculations of the dots obtained with an eight-band k.p model show two confined states in the conduction band and many levels in the valence band.

Published in:

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Date of Conference:

8-8 May 1998

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