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Laser emission from semiconductor microcavities: transition from nonperturbative to perturbative regimes

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4 Author(s)
Hailin Wang ; Dept. of Phys., Oregon Univ., Eugene, OR, USA ; Xudong Fan ; Hou, H.Q. ; Hammons, B.E.

Summary form only given.We present experimental studies of laser emission in the nonperturbative regime in a GaAs quantum well (QW) microcavity. By tuning the cavity resonance to the low energy side of the inhomogeneous exciton distribution, we are able to achieve laser emission at exciton densities well below the exciton saturation density at which cavity polaritons vanish.

Published in:

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Date of Conference:

8-8 May 1998