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A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces

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3 Author(s)
A. Scorzoni ; CNR, Bologna, Italy ; M. Vanzi ; C. Caprile

A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<>

Published in:

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Date of Conference:

5-7 March 1990