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How to include the dependency of the RDS(on) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters

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3 Author(s)
J. W. Kolar ; Power Electron. Sect., Wien Univ., Austria ; H. Ertl ; F. C. Zach

In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors

Published in:

IEEE Transactions on Industrial Electronics  (Volume:45 ,  Issue: 3 )