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Finite element thermal model for high power transients in microelectronics with CVD diamond heat spreaders

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4 Author(s)
Clark, K. ; Dept. of Chem., Arkansas Univ., Fayetteville, AR, USA ; Ulrich, R. ; Gordon, M. ; Leftwich, M.

A finite element model is developed for predicting the time-dependent temperature response in high power microelectronics which employ periodic transients. A comparison of a package containing a beryllium oxide (BeO) heat spreader to a package containing a CVD diamond heat spreader is completed. The transport method, for this model, is limited to conduction; contact with a cold plate boundary and a constant initial operating temperature are modeled. The anisotropic nature of CVD diamond's thermal conductivity is considered. The rapid thermal shock associated initially is a significant factor in the life of the device and its associated package. The small time steps required to model a transient package of even moderate frequency creates computational problems. Given the limitations in software and hardware, a method for predicting the transient response of a microelectronics package is developed

Published in:

Electronic Components & Technology Conference, 1998. 48th IEEE

Date of Conference:

25-28 May 1998