Enhanced SPICE MOSFET model for analog applications including parameter extraction schemes

An enhanced SPICE MOSFET circuit simulator model is presented and shown to be very effective in simulating device characteristics. During formulation of the model, special attention was given to its ability to accurately simulate device output conductance and transconductance; thus the emphasis was on ensuring the model's suitability for analog as well as digital purposes. Parameter extract procedures using both directed nonlinear least-squares strategies and direct extraction methods with straightforward analytical equation solving were developed for the model. These procedures are described, and the accuracy and suitability of the direct methods are assessed. Comparisons between the results obtained using these methods and the more general parameter optimization schemes demonstrate that the direct parameter extraction procedure can be almost as accurate as the optimization methods providing the data used are chosen carefully.<>