By Topic

A novel self-oscillating HEMT-HBT cascode VCO-mixer using an active tunable inductor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kobayashi, K.W. ; TRW Electron. Syst. & Technol., Redondo Beach, CA, USA ; Oki, A.K. ; Umemoto, D.K. ; Block, T.R.
more authors

Here we describe a unique Ka-band self-oscillating HEMT-HBT cascode mixer design which integrates an active tunable resonator circuit. The VCO-mixer MMIC integrates GaAs HEMT's and HBT's using selective molecular beam epitaxy (MBE) technology. The HEMT-HBT cascode active mixer operates similarly to a dual-gate mixer. The HBT of the cascode is used to construct a VCO by presenting the base with an HEMT tunable active inductor. The VCO can be tuned from 28.5 to 29.3 GHz while providing ≈0 dBm of output power. Operated as an upconverter, the MMIC achieves 6-9 dB conversion loss over a 31-39 GHz output frequency band. Using these active approaches, both VCO and mixer functions were integrated into a compact 1.44×0.76 mm2 chip area. The active RF integrated circuit (IC) techniques presented here have direct implications to future high complexity millimeter-wave monolithic integrated circuits (MIMICs) for ultrahigh-speed clock recovery and digital radio applications

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 6 )