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Plasma ion implantation hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source

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6 Author(s)
Shu Qin ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA ; Yuanzhong Zhou ; T. Nakatsugawa ; I. F. Husein
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Defect passivation in polycrystalline silicon (poly-Si) CMOS thin-film transistors (TFT's) has been performed by plasma ion implantation (PII) hydrogenation process. Implantation at low energy (2 keV) and high dose rate(~1016/cm2 S) was achieved by an inductively-coupled plasma source. The device parameter improvements are saturated in 3-4 min, which is much shorter than other hydrogenation methods reported in the literature. The stress measurements indicate that the devices hydrogenated by this new technique have much better long-term reliability than that hydrogenated by other techniques

Published in:

IEEE Transactions on Electron Devices  (Volume:45 ,  Issue: 6 )