Referenced Items are not available for this document.
This paper reports on a matching technique of the source and load impedance focused on a phase distortion of InGaP/GaAs HBT power amplifiers to simultaneously achieve a high efficiency and a high linearity performance. Load-pull measurements were done to maximize power added efficiency (PAE) and source pull measurements to minimize the phase distortion and adjacent channel leakage power (ACP). Our HBT exhibited a high PAE of 60.7% and an ACP at a 50 kHz offset frequency of -51 dBc for 1.5 GHz π/4-shift QPSK modulated signal with an output power (Pcut) of 31 dBm under a supply voltage of 3.5 V
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
6
)
Date of Publication: Jun 1998
- Page(s):
- 1196 - 1200
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5929196
- Digital Object Identifier :
- 10.1109/16.678510
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1998
- Sponsored by :
- IEEE Electron Devices Society
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