A quasi-two-dimensional HEMT model for DC and microwave simulation

A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT's. This simulator, which accounts for hot-electron effects in submicron HEMT's, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT's.