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SiGe HBT Technology Based on a 0.13- \mu{\rm m} Process Featuring an {f}_{\rm MAX} of 325 GHz

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8 Author(s)
Hashimoto, T. ; Micro Device Div., Hitachi, Ltd., Tokyo, Japan ; Tokunaga, K. ; Fukumoto, K. ; Yoshida, Y.
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A self-aligned SiGe HBT technology achieving a cutoff frequency (fT) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p+ intrinsic base region was raised to 27.4% to improve fT, and boron concentration in the intrinsic base region reached 2.4 × 1020 cm-3 as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (fMAX) of 325 GHz. This technology can be applied to optical and mm wave communication systems.

Published in:

Electron Devices Society, IEEE Journal of the  (Volume:2 ,  Issue: 4 )