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Statistical Delay Modeling for Single-Electron-Based Circuits

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2 Author(s)
Ran Xiao ; Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada ; Chunhong Chen

The electron tunneling within single-electron devices is stochastic in nature, and its timing delay has to be understood in a probabilistic sense. This paper models the delay as a continuous-time Markov process, and presents a statistical method to describe the dynamic characteristics of single-electron circuits for delay estimation. Theoretical analysis and applications are shown to verify the effectiveness of the proposed approach under both low and relatively high temperatures. Some existing simulation methods are also evaluated for comparative study.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:13 ,  Issue: 4 )