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Bit-to-Bit Interference of Multibit Nanoelectromechanical Memory Cells (T Cells)

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3 Author(s)
Jae Hwan Han ; Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea ; Kwanyong Kim ; Woo Young Choi

The bit-to-bit interference (BI) of multibit nano-electromechanical memory cells (T cells) has been investigated, and an analytical model of BI has been derived. The relationship between the BI and the cell size is discussed using both the analytical and the finite-element-method models. It has been found that BI is independent of the cell size as long as all the geometrical dimensions are scaled down in proportion. However, in actual cases, BI becomes more severe as the cell size decreases owing to the nonscaling parameters.

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Nanotechnology, IEEE Transactions on  (Volume:13 ,  Issue: 4 )